NTD5806NT4G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTD5806NT4G
Datasheet:
Description:
MOSFETs DPAK SMD/SMT N-Channel number of channels:1 40 W 40 V Continuous Drain Current (ID):33 A 17 nC
| Parameter | Value |
|---|---|
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Resistance | 19 MΩ |
| Height | 2.38 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | EOL (Last Updated: 5 months ago) |
| Max Power Dissipation | 39 W |
| Power Dissipation | 40 W |
| Number of Channels | 1 |
| Input capacitance | 860 pF |
| Continuous Drain Current (ID) | 33 A |
| Rds On Max | 19 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| Turn-On Delay Time | 10.6 ns |
| Turn-Off Delay Time | 14.2 ns |
| Element Configuration | Single |
| Rise Time | 49 ns |
| Gate Charge | 17 nC |
| Drain to Source Resistance | 12.7 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Manufacturer Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | -20 V, 20 V |
| FET Type(Transistor Polarity) | N-Channel |
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